Vertical order in stacked layers of self-assembled In„Ga...As quantum rings on GaAs „001..

Stacked layers of self-assembled InsGadAs quantum rings on GaAs grown by solid source molecular beam epitaxy are studied by ex situ atomic force microscopy sAFMd, low temperature photoluminescence sPLd and cross-sectional transmission electron microscopy sXTEMd. The influence of the strain field and InAs segregation on the surface morphology, optical properties and vertical ordering of three quantum ring layers is analyzed for GaAs spacers between layers from 1.5 to 14 nm. AFM and PL results show that samples with spacers .6 nm have surface morphology and optical properties similar to single layers samples. XTEM results on samples with 3 and 6 nm GaAs spacers show that the rings are preserved after capping with GaAs, and evidence the existence of vertically ordered quantum rings. © 2005 American Institute of Physics. fDOI: 10.1063/1.1866228g